Room-temperature self-organizing characteristics of soluble acene field-effect transistors
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Lee, Wi Hyoung
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Lim, Jung Ah
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Pohang Univ Sci & Technol, Dept Chem Engn, Pohang 790784, South KoreaPohang Univ Sci & Technol, Dept Chem Engn, Pohang 790784, South Korea
Lim, Jung Ah
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Kim, Do Hwan
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Cho, Jeong Ho
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Jang, Yunseok
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Pohang Univ Sci & Technol, Dept Chem Engn, Pohang 790784, South KoreaPohang Univ Sci & Technol, Dept Chem Engn, Pohang 790784, South Korea
Jang, Yunseok
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Kim, Yong Hoon
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Korea Elect Technol Inst, Informat Display Res Ctr, Songnam 463816, Gyeonggi, South KoreaPohang Univ Sci & Technol, Dept Chem Engn, Pohang 790784, South Korea
Kim, Yong Hoon
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Han, Jeong In
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Korea Elect Technol Inst, Informat Display Res Ctr, Songnam 463816, Gyeonggi, South KoreaPohang Univ Sci & Technol, Dept Chem Engn, Pohang 790784, South Korea
Han, Jeong In
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Cho, Kilwon
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Pohang Univ Sci & Technol, Dept Chem Engn, Pohang 790784, South KoreaPohang Univ Sci & Technol, Dept Chem Engn, Pohang 790784, South Korea
Cho, Kilwon
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[1] Pohang Univ Sci & Technol, Dept Chem Engn, Pohang 790784, South Korea
[2] Korea Elect Technol Inst, Informat Display Res Ctr, Songnam 463816, Gyeonggi, South Korea
We report on the room-temperature self-organizing characteristics of thin films of the organic small-molecule semiconductor triethylsilylethynyl-anthradithiophene (TES-ADT) and its effect on the electrical properties of TES-ADT-based field-effect transistors (FETs). The morphology of TES-ADT films changed dramatically with time, and the field-effect mobility of FETs based on these films increased about 100-fold after seven days as a result of the change in molecular orientation from a tilted structure in the as-prepared film to a well-oriented structure in the final film. We found that the molecular movement is large enough to induce a conformational. change to an energetically stable state in spin-coated TES-ADT films, because TES-ADT has a low glass-transition temperature (around room temperature), Our findings demonstrate that organic small-molecule semiconductors that exhibit a low crystallinity immediately after spin coating can be changed into highly crystalline structures by spontaneous self-organization of the molecules at room temperature, which results in improved electrical properties of FETs based on these semiconductors.