Growth and properties of InxGa1-xN/AlyGa1-yN multiquantum wells developed by molecular beam epitaxy

被引:22
作者
Singh, R
Doppalapudi, D
Moustakas, TD
机构
[1] BOSTON UNIV,CTR PHOTON RES,MOL BEAM EPITAXY LAB,BOSTON,MA 02215
[2] BOSTON UNIV,DEPT MFG ENGN,BOSTON,MA 02215
关键词
D O I
10.1063/1.117646
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ln(0.09)Ga(0.91)N/GaN and In0.35Ga0.65N/Al(0.1)G(0.9)N multiquantum well structures (MQW) were grown by molecular beam epitaxy on (0001) sapphire substrates. The thickness of the wells and the barriers were in the range of 80-120 Angstrom. The microstructure of these MQW structures was investigated by transmission electron microscopy. The room temperature photoluminescence spectra in these MQW structures peak at 387 and 363 nm with full width at half maximum of 16 and 28 nm, respectively. (C) 1996 American Institute of Physics.
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页码:2388 / 2390
页数:3
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