Electrical performance and reliability of tunnel magnetoresistance heads for 100-Gb/in2 application

被引：13

作者：

Kuwashima, T ^{[1
]}

Fukuda, K ^{[1
]}

Kiyono, H ^{[1
]}

Sato, K ^{[1
]}

Kagami, T ^{[1
]}

Saruki, S ^{[1
]}

Uesugi, T ^{[1
]}

Kasahara, N ^{[1
]}

Ohta, N ^{[1
]}

Nagai, K ^{[1
]}

Hachisuka, N ^{[1
]}

Takahashi, N ^{[1
]}

Naoe, M ^{[1
]}

Miura, S ^{[1
]}

Barada, K ^{[1
]}

Kanaya, T ^{[1
]}

Inage, K ^{[1
]}

Kobayashi, A ^{[1
]}

机构：

[1] TDK Corp, Head Business Grp, Nagano 3858555, Japan

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2004年 / 40卷 / 01期

关键词：

current-perpendicular-to-plane (CPP) geometry; electric properties; magnetic tunnel junction; 1/f noise; reliability; shot noise; tunnel giant magnetoresistance (GMR); tunnel magnetoresistance (TuMR) head;

D O I：

10.1109/TMAG.2003.821203

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Tunnel magnetoresistance (TuMR) heads are attractive candidates for future high-density recording. To achieve the high areal density, it is necessary for TuMR heads to get lower resistance and higher delta R/R film. A low resistance and high delta R/R tunneling junction film has been developed and used for this study. The resistance area product and delta R/R are 3 Omega - mum(2) and 18%, respectively. Reliability that includes lifetime was also studied. We have found TuMR heads can be a promising candidate for 100 Gb/in(2) application.

引用

页码：176 / 181

页数：6

共 11 条

[1] Fabrication and electric properties of lapped type of TMR heads for ∼50 Gb/in2 and beyond [J].