Ultrathin oxides: Bulk-oxide-like model surfaces or unique films?

被引：52

作者：

Freysoldt, Christoph ^{[1
]}

Rinke, Patrick ^{[1
]}

Scheffler, Matthias ^{[1
]}

机构：

[1] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany

来源：

PHYSICAL REVIEW LETTERS | 2007年 / 99卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.99.086101

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

To better understand the electronic and chemical properties of wide-gap oxide surfaces at the atomic scale, experimental work has focused on epitaxial films on metal substrates. Recent findings show that these films are considerably thinner than previously thought. This raises doubts about the transferability of the results to surface properties of thicker films and bulk crystals. By means of density-functional theory and approximate GW corrections for the electronic spectra we demonstrate for three characteristic wide-gap oxides (silica, alumina, and hafnia) the influence of the substrate and highlight critical differences between the ultrathin films and surfaces of bulk materials. Our results imply that monolayer-thin oxide films have rather unique properties.

引用

页数：4

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