Phase transformations in hafnium dioxide thin films grown by atomic layer deposition at high temperatures

被引:68
作者
Aarik, J
Aidla, A
Mändar, H
Uustare, T
Kukli, K
Schuisky, M
机构
[1] Univ Tartu, Inst Sci Mat, EE-51010 Tartu, Estonia
[2] Univ Tartu, Inst Expt Phys & Technol, EE-51010 Tartu, Estonia
[3] Univ Uppsala, Angstrom Lab, Dept Inorgan Chem, S-75121 Uppsala, Sweden
关键词
hafnium dioxide; atomic layer deposition; structure; Auger electron spectroscopy;
D O I
10.1016/S0169-4332(00)00859-X
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
High-temperature cubic phase of HfO2 was observed by reflection high-energy electron diffraction in nanocrystalline thin films grown by atomic layer deposition from HfCl4 and H2O at substrate temperatures of 880-940 degreesC. The phase was formed at properly chosen precursor doses and it was observed on the surface of films, which according to X-ray diffraction data consisted of monoclinic HfO2. The thickness of the surface layer, in which the cubic phase appeared, was estimated to be 5-10 nm. According to Auger electron spectroscopy data, formation of the cubic phase was accompanied with an increase in the ionicity of O-Hf bonds. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:15 / 21
页数:7
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