Pinning effect of punched-out dislocations in carbon-, nitrogen- or boron-doped silicon wafers

The pinning effect of punched-out dislocations in carbon-, nitrogen- or boron-doped Czochralski-grown silicon wafers was investigated using an indentation method. The size of a rosette pattern which corresponds to the distance of dislocation movement was measured after heat-treatment without any thermal stress. It was found that the rosette size decreased by carbon, nitrogen and boron doping with a concentration of 2.0 x 10(16)-1.4 x 10(17), 5.3 x 10(13)-5.3 x 10(14) and 2.0 x 10(18)-2.0 x 10(19) atoms/cm(3), respectively. The rosette size was approximately proportional to the power -1/3 of carbon, -1/10 of nitrogen and -1/10 of boron concentration, which differed from the reported power of -2/3 of oxygen concentration.