Formation of self-assembled GaAs/AlGaAs quantum dots by low-temperature epitaxy

被引：22

作者：

Lee, CD ^{[1
]}

Park, C

Lee, HJ

Noh, SK

Lee, KS

Park, SJ

机构：

[1] Korea Res Inst Stand & Sci, Taejon 305600, South Korea

[2] Elect & Telecommun Res Inst, Taejon 305600, South Korea

[3] Kwangju Inst Sci & Technol, Kwangju 506303, South Korea

[4] Hyundai Elect Ind Co, Inchon 467701, South Korea

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 18期

关键词：

D O I：

10.1063/1.122523

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the direct formation of self-assembled GaAs/AlGaAs quantum dots by low-temperature molecular beam epitaxy. To drive a three dimensional growth mode, the (1X1) AlGaAs surface was exposed alternately to the Ga and As sources. The resulting GaAs nanocrystals having {111} facets were clearly identified by high-resolution transmission electron microscopy. The emission spectra also confirmed the formation of dots. The transition to a three-dimensional growth mode is attributed to the limited surface migration of Ga adatoms on the AlGaAs surface, which has excess As at low substrate temperature. (C) 1998 American Institute of Physics. [S0003-6951(98)01544-7].

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页码：2615 / 2617

页数：3

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共 12 条

[1] ONSET OF INCOHERENCY AND DEFECT INTRODUCTION IN THE INITIAL-STAGES OF MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGHLY STRAINED INXGA1-XAS ON GAAS(100) [J].

GUHA, S ;

MADHUKAR, A ;

RAJKUMAR, KC .

APPLIED PHYSICS LETTERS, 1990, 57 (20) :2110-2112

[2] Morphological evolution of strained films by cooperative nucleation [J].

Jesson, DE ;

Chen, KM ;

Pennycook, SJ ;

Thundat, T ;

Warmack, RJ .

PHYSICAL REVIEW LETTERS, 1996, 77 (07) :1330-1333

[3] STRUCTURAL-PROPERTIES OF AS-RICH GAAS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES [J].

KAMINSKA, M ;

LILIENTALWEBER, Z ;

WEBER, ER ;

GEORGE, T ;

KORTRIGHT, JB ;

SMITH, FW ;

TSAUR, BY ;

CALAWA, AR .

APPLIED PHYSICS LETTERS, 1989, 54 (19) :1881-1883

[4] NEW MBE GROWTH METHOD FOR INSB QUANTUM-WELL BOXES [J].

KOGUCHI, N ;

TAKAHASHI, S ;

CHIKYOW, T .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :688-692

[5] GROWTH OF GAAS EPITAXIAL MICROCRYSTALS ON AN S-TERMINATED GAAS SUBSTRATE BY SUCCESSIVE IRRADIATION OF GA AND AS MOLECULAR-BEAMS [J].

KOGUCHI, N ;

ISHIGE, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (5A) :2052-2058

[6] CRITICAL LAYER THICKNESS FOR SELF-ASSEMBLED INAS ISLANDS ON GAAS [J].

LEONARD, D ;

POND, K ;

PETROFF, PM .

PHYSICAL REVIEW B, 1994, 50 (16) :11687-11692

[7] Theory and simulation of crystal growth [J].

Levi, AC ;

Kotrla, M .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1997, 9 (02) :299-344

[8] STOICHIOMETRIC LOW-TEMPERATURE GAAS AND ALGAAS - A REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY [J].

MISSOUS, M .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (07) :4467-4471

[9] ANISOTROPIC SURFACE MIGRATION OF GA ATOMS ON GAAS(001) [J].

OHTA, K ;

KOJIMA, T ;

NAKAGAWA, T .

JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) :71-74

[10] ARSENIC PRESSURE-DEPENDENCE OF SURFACE-DIFFUSION OF GA ON NONPLANAR GAAS SUBSTRATES [J].

SHEN, XQ ;

KISHIMOTO, D ;

NISHINAGA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1A) :11-17