Ballistic transport in InSb quantum wells at high temperature

Measurements were made on a 0.2 mum four-terminal device, fabricated from an InSb/Al0.15In0.85Sb quantum well structure, at temperatures from 1.5 to 300 K. Negative bend resistance, a signature of ballistic transport, was observed at temperatures up to 205 K. The disappearance of the negative bend resistance at higher temperatures was accompanied by a non-linear dependence of the Hall voltage on magnetic field. The non-linearity indicates multiple-carrier conduction, which we characterize using quantitative mobility spectrum analysis. (C) 2003 Elsevier B.V. All rights reserved.