Subsolidus phase relations in the Ga2O3-In2O3-SnO2 system

被引：55

作者：

Edwards, DD ^{[1
]}

Mason, TO ^{[1
]}

机构：

[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1998年 / 81卷 / 12期

关键词：

D O I：

10.1111/j.1151-2916.1998.tb02769.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Subsolidus phase relationships in the Ga2O3-In2O3-SnO2 system were studied by X-ray diffraction over the temperature range 1250-1400 degrees C. At 1250 degrees C, several phases are stable in the ternary system, including Ga2O3(ss), In2O3(ss), SnO2, Ga3-xIn5+xSn2O16, and several intergrowth phases that can be expressed as Ga4-4xIn4xSnn-4O2n-2 where n is an integer, An In2O3-SnO2 phase and Ga4SnO8 format 1375 degrees C but are not stable at 1250 degrees C. GaInO3 did not form over the temperature range 1000-1400 degrees C.

引用

页码：3285 / 3292

页数：8

共 27 条

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