Dislocation related photoluminescence in silicon -: art. no. 187404

Dislocation related photoluminescence in Si and SiGe is attributed to stable interstitial clusters bound to 60 degrees dislocations. Density functional based total energy calculations in Si give binding energies between 1.5 and 3.6 eV for I-3 and I-4 clusters with 90 degrees and 30 degrees partials. They possess donor levels around E-v + 0.4 eV which are consistent with deep level transient spectroscopic studies on p-Si. It is further suggested that the clusters would act as. the obstacles to the movement of dislocations which may have been observed in recent transmission electron microscopy studies.