The effects of deposition rate and substrate temperature of ITO thin films on electrical and optical properties

被引：115

作者：

Salehi, A ^{[1
]}

机构：

[1] KN Toosi Univ Technol, Dept Elect Engn, Tehran, Iran

来源：

THIN SOLID FILMS | 1998年 / 324卷 / 1-2期

关键词：

indium tin oxide; opto-electronics; transmittance; reflectance; resistivity; deposition rate; substrate temperature;

D O I：

10.1016/S0040-6090(98)00371-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium Tin Oxide (ITO) films have been deposited using a thermal deposition technique without introduction of oxygen into the chamber. It has been found that the deposition rate, rather than the substrate temperature, is the dominant factor in controlling the transmittance of the ITO films. A transmittance value of more than 80% in the visible region of the spectrum and a resistivity of 9.1 X 10(-4) Ohm cm has been obtained with a deposition rate of 0.2 Angstrom/s. SEM, XRD and RES techniques have been used in order to identify the structure and composition changes of the ITO layers deposited at different conditions. (C) 1998 Elsevier Science S.A. All rights reserved.

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页码：214 / 218

页数：5

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