APPLICATION OF DYNAMIC IN-SITU ELLIPSOMETRY TO THE DEPOSITION OF TIN-DOPED INDIUM OXIDE-FILMS BY REACTIVE DIRECT-CURRENT MAGNETRON SPUTTERING

被引:19
作者
FUKAREK, W [1 ]
KERSTEN, H [1 ]
机构
[1] EM ARNDT UNIV GREIFSWALD, FACHRICHTUNG PHYS, W-7489 GREIFSWALD, GERMANY
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1994年 / 12卷 / 02期
关键词
D O I
10.1116/1.579162
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The application of dynamic in situ ellipsometry to the monitoring of the deposition of transparent indium tin oxide layers by reactive direct-current magnetron sputtering in Ar/02 gas mixtures is described. The dependence of the refractive index and the deposition rate on the discharge power and on the oxidation state of the target show that the state of the target is the essential parameter for the production of indium tin oxide films with the desired properties. The sputter yield of the pure In:Sn alloy exceeds that of the oxide by a factor of about 6. The film growth species in the case of an oxidized target are In2O molecules or oxide clusters rather than metal atoms.
引用
收藏
页码:523 / 528
页数:6
相关论文
共 32 条
[1]   STUDIES OF SURFACE, THIN-FILM AND INTERFACE PROPERTIES BY AUTOMATIC SPECTROSCOPIC ELLIPSOMETRY [J].
ASPNES, DE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02) :289-295
[2]   HIGH PRECISION SCANNING ELLIPSOMETER [J].
ASPNES, DE ;
STUDNA, AA .
APPLIED OPTICS, 1975, 14 (01) :220-228
[3]   EFFECTS OF COMPONENT OPTICAL-ACTIVITY IN DATA REDUCTION AND CALIBRATION OF ROTATING-ANALYZER ELLIPSOMETERS [J].
ASPNES, DE .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1974, 64 (06) :812-819
[4]   THE EFFECT OF TARGET EROSION AND RF SUBSTRATE BIASING ON THE PROPERTIES OF REACTIVELY SPUTTERED ITO FILMS [J].
AVARITSIOTIS, JN ;
SIVRIDIS, DK ;
RODITI, E .
SOLAR ENERGY MATERIALS, 1987, 15 (06) :485-493
[5]  
Azzam R. M. A., 1977, ELLIPSOMETRY POLARIZ
[6]  
BEHNKE JF, 1991, 10 P ISPC
[7]   SPUTTERING OF METAL TARGETS UNDER INCREASED OXYGEN PARTIAL-PRESSURE [J].
BETZ, G ;
HUSINSKY, W .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 13 (1-3) :343-347
[9]   MASS SPECTROMETRIC INVESTIGATION OF VAPORIZATION OF IN2O3 [J].
BURNS, RP ;
DROWART, J ;
INGHRAM, MG ;
DEMARIA, G .
JOURNAL OF CHEMICAL PHYSICS, 1963, 38 (04) :1035-+
[10]  
COLLINS RW, 1988, AMORPHOUS SILICON RE, P1003