Improvement in the optoelectronic properties of a-SiO:H films

Hydrogenated amorphous silicon oxide (a-SiO:H) films prepared by rf plasma enhanced chemical vapour deposition (PECVD) method have recently proved their potential as a photovoltaic material for the fabrication of high efficiency multijunction amorphous silicon solar cells. If deposited under proper conditions, it may be a better wide band gap material than the normally used a-SiC:H. In this paper we report the improvements achieved over the previously reported results. The films have been characterized in detail in terms of their optoelectronic properties, structural characteristics, defect density and light induced degradation. (C) 1999 Kluwer Academic Publishers.