PROPERTIES OF SILICON-OXYGEN ALLOY-FILMS PREPARED FROM SIH4+CO2 GAS-MIXTURE

被引：16

作者：

HAGA, K ^{[1
]}

MURAKAMI, A ^{[1
]}

YAMAMOTO, K ^{[1
]}

KUMANO, M ^{[1
]}

WATANABE, H ^{[1
]}

机构：

[1] SENDAI NATL COLL TECHNOL,SENDAI 98931,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 12A期

关键词：

SILICON-OXYGEN ALLOY FILM; GLOW DISCHARGE; WIDE OPTICAL GAP; ACTIVATION ENERGY; XPS; ETCHING;

D O I：

10.1143/JJAP.30.3331

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Measurement of electrical properties, etch rates in HF (49%) and HF-HNO3 (49% HF:63% HNO3 = 1:20) solutions and X-ray photoemission spectra are reported for amorphous silicon-oxygen alloy films (a-SiO(x):H) prepared by r. f. glow discharge decomposition of a SiH4-CO2 gas mixture. Activated band conduction is observed in the temperature range of 324-424 K. Though the addition of oxygen causes a decrease in the conductivity, the activation energy for conduction remains at a constant value of around 1.0 eV in the films with oxygen content x from 0.17 to 0.5. The broadening toward the high binding energy of the Si-2p core level in X-ray photoemission spectra with oxygen content is explained by the effects of oxygen atoms incorporated into the films.

引用

页码：3331 / 3334

页数：4

共 19 条

[1] TRANSPORT-PROPERTIES OF A-SI - H ALLOYS PREPARED BY RF SPUTTERING-I [J].