A first principle study of band structure of III-nitride compounds

被引:53
作者
Ahmed, R [1 ]
Akbarzadeh, H
Fazel-e-Aleem
机构
[1] Univ Punjab, Ctr High Energy Phys, Lahore 54590, Pakistan
[2] Isfahan Univ Technol, Dept Phys, Esfahan 841546, Iran
关键词
semiconductors; III-V compounds; III-nitrides; bandgap; WIEN2k; FPLAPW;
D O I
10.1016/j.physb.2005.08.044
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The band structure of both phases, zinc-blende and wurtzite, of aluminum nitride, indium nitride and gallium nitride has been studied using computational methods. The study has been done using first principle full-potential linearized augmented plane wave (FP-LAPW) method, within the framework of density functional theory (DFT). For the exchange correlation potential, generalized gradient approximation (GGA) and an alternative form of GGA proposed by Engel and Vosko (GGA-EV) have been used. Results obtained for band structure of these compounds have been compared with experimental results as well as other first principle computations. Our results show a significant improvement over other theoretical work and are closer to the experimental data. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:52 / 60
页数:9
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