A first principle study of band structure of III-nitride compounds

被引:53
作者
Ahmed, R [1 ]
Akbarzadeh, H
Fazel-e-Aleem
机构
[1] Univ Punjab, Ctr High Energy Phys, Lahore 54590, Pakistan
[2] Isfahan Univ Technol, Dept Phys, Esfahan 841546, Iran
关键词
semiconductors; III-V compounds; III-nitrides; bandgap; WIEN2k; FPLAPW;
D O I
10.1016/j.physb.2005.08.044
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The band structure of both phases, zinc-blende and wurtzite, of aluminum nitride, indium nitride and gallium nitride has been studied using computational methods. The study has been done using first principle full-potential linearized augmented plane wave (FP-LAPW) method, within the framework of density functional theory (DFT). For the exchange correlation potential, generalized gradient approximation (GGA) and an alternative form of GGA proposed by Engel and Vosko (GGA-EV) have been used. Results obtained for band structure of these compounds have been compared with experimental results as well as other first principle computations. Our results show a significant improvement over other theoretical work and are closer to the experimental data. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:52 / 60
页数:9
相关论文
共 41 条
[31]   Solid state calculations using WIEN2k [J].
Schwarz, K ;
Blaha, P .
COMPUTATIONAL MATERIALS SCIENCE, 2003, 28 (02) :259-273
[32]   Density-functional calculations for III-V nitrides using the local-density approximation and the generalized gradient approximation [J].
Stampfl, C ;
Van de Walle, CG .
PHYSICAL REVIEW B, 1999, 59 (08) :5521-5535
[33]   OPTICAL BAND-GAP OF INDIUM NITRIDE [J].
TANSLEY, TL ;
FOLEY, CP .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (09) :3241-3244
[34]   Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy [J].
VanHove, JM ;
Hickman, R ;
Klaassen, JJ ;
Chow, PP ;
Ruden, PP .
APPLIED PHYSICS LETTERS, 1997, 70 (17) :2282-2284
[35]   Breakdown of the band-gap-common-cation rule: The origin of the small band gap of InN [J].
Wei, SH ;
Nie, XL ;
Batyrev, IG ;
Zhang, SB .
PHYSICAL REVIEW B, 2003, 67 (16)
[36]   Small band gap bowing in In1-xGaxN alloys [J].
Wu, J ;
Walukiewicz, W ;
Yu, KM ;
Ager, JW ;
Haller, EE ;
Lu, H ;
Schaff, WJ .
APPLIED PHYSICS LETTERS, 2002, 80 (25) :4741-4743
[37]   Unusual properties of the fundamental band gap of InN [J].
Wu, J ;
Walukiewicz, W ;
Yu, KM ;
Ager, JW ;
Haller, EE ;
Lu, H ;
Schaff, WJ ;
Saito, Y ;
Nanishi, Y .
APPLIED PHYSICS LETTERS, 2002, 80 (21) :3967-3969
[38]   Correlations between electrical and optical properties for OMVPE InN [J].
Yamamoto, A ;
Sugita, K ;
Takatsuka, H ;
Hashimoto, A ;
Davydov, VY .
JOURNAL OF CRYSTAL GROWTH, 2004, 261 (2-3) :275-279
[39]   Broad-area photoelectrochemical etching of GaN [J].
Youtsey, C ;
Adesida, I ;
Bulman, G .
ELECTRONICS LETTERS, 1997, 33 (03) :245-246
[40]   Schottky barrier engineering in III-V nitrides via the piezoelectric effect [J].
Yu, ET ;
Dang, XZ ;
Yu, LS ;
Qiao, D ;
Asbeck, PM ;
Lau, SS ;
Sullivan, GJ ;
Boutros, KS ;
Redwing, JM .
APPLIED PHYSICS LETTERS, 1998, 73 (13) :1880-1882