Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 and 370 meV below the conduction band

被引：33

作者：

Auret, F. Danie ^{[1
]}

Meyer, W. E. ^{[1
]}

van Rensburg, P. J. Janse ^{[1
]}

Hayes, M. ^{[1
]}

Nel, J. M. ^{[1
]}

von Wenckstern, Holger ^{[2
]}

Schmidt, H. ^{[2
]}

Biehne, G. ^{[2
]}

Hochmuth, H. ^{[2
]}

Lorenz, M. ^{[2
]}

Grundmann, M. ^{[2
]}

机构：

[1] Univ Pretoria, Dept Phys, ZA-0002 Pretoria, South Africa

[2] Univ Leipzig, Abt Halbleiterphys, Fac Phys & Geowissensch, D-04103 Leipzig, Germany

来源：

PHYSICA B-CONDENSED MATTER | 2007年 / 401卷

基金：

新加坡国家研究基金会;

关键词：

ZnO; high resolution Laplace DLTS; pulsed-laser deposition; defects;

D O I：

10.1016/j.physb.2007.08.192

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have used deep level transient spectroscopy (DLTS) to characterize defects in ZnO grown by pulsed-laser deposition (PLD). Using high resolution Laplace DLTS, we found that at the high temperature side of the commonly observed defect E3 (about 300 meV below the conduction band) another close lying peak (ET with thermal activation energy of 370 meV) is also observed. The concentration ratio of E3 and E3' depends on the annealing history of the samples. It is most prevalent in as-grown samples and samples that had been annealed in an oxygen atmosphere. This suggests that EY may be related to the incorporation of oxygen in the lattice. Electron capture onto that EY defect strongly increases with increasing temperature. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：378 / 381

页数：4

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