Fabrication of SiGe-on-insulator by rapid thermal annealing of Ge on Si-on-insulator substrate

被引：9

作者：

Kutsukake, K

Usami, N

Fujiwara, K

Ujihara, T

Sazaki, G

Nakajima, K

Zhang, BP

Segawa, Y

机构：

[1] Tohoku Univ, IMR, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] RIKEN, Photodynam Res Ctr, Aoba Ku, Sendai, Miyagi 9800845, Japan

来源：

APPLIED SURFACE SCIENCE | 2004年 / 224卷 / 1-4期

关键词：

SiGe; SGOI; SOI; RTA; phase diagram;

D O I：

10.1016/j.apsusc.2003.08.100

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report on fabrication of SiGe single crystal film on insulator by a simple approach including a growth of a thin Ge film on a commercially available Sol substrate, formation of a SiO2 protective layer, and rapid thermal annealing (RTA) in an Ar atmosphere. Homogeneity of the local Si fraction in SiGe-on-insulator (SGOI) was found to be closely connected with the SiGe phase diagram, and RTA below the solidus line is required to obtain homogeneous SGOI. In spite of the high annealing temperature beyond the melting point of Ge, obtained SGOI was revealed to be single crystalline as evidenced by electron back scattering pattern analysis. (C) 2003 Elsevier B.V All rights reserved.

引用

页码：95 / 98

页数：4

共 12 条

[1] SiGe-based semiconductor-on-insulator substrate created by low-energy separation-by-implanted-oxygen [J].