Implementation of high-coupling and broadband transformer in RFCMOS technology

被引：11

作者：

Hsu, HM ^{[1
]}

机构：

[1] Natl Chung Hsing Univ, Dept Elect Engn, Taichung 40227, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2005年 / 52卷 / 07期

关键词：

analytical formula; broadband; calculation of mutual inductance; high coupling; silicon-based; transformer;

D O I：

10.1109/TED.2005.850640

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper proposes a structure for transformer with high-coupling, broadband, and small chip area characteristics using current silicon-based technology. The proposed device has tight coupling (kappa = 0.92), wide bandwidth (f(SR) = 30.8 GHz), and minimum chip area (OD = 140 mu m). Furthermore, the analytical formula for calculating mutual inductance is derived in this study; experimental results indicate that the analytical formula is feasible. The proposed transformer will be useful in designing high-performance RF integrated circuits for wireless applications.

引用

页码：1410 / 1414

页数：5

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