Review of technology for 157-nm lithography

被引：48

作者：

Bates, AK

Rothschild, M

Bloomstein, TM

Fedynyshyn, TH

Kunz, RR

Liberman, V

Switkes, M

机构：

[1] IBM Corp, Storage Syst Grp, Tucson, AZ 85744 USA

[2] MIT, Lincoln Lab, Lexington, MA 02420 USA

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 2001年 / 45卷 / 05期

关键词：

D O I：

10.1147/rd.455.0605

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper outlines the critical issues facing the implementation of 157-nm lithography as a sub-100-nm technology. The status of the present technology for mask materials, pellicles, optical materials, coatings, and resists is presented.

引用

页码：605 / 614

页数：10

共 22 条

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