Oxidation of Si(001)-2 x 1

被引：33

作者：

Pi, TW

Wen, JF

Ouyang, CP

Wu, RT

Wertheim, GK

机构：

[1] Synchrotron Radiat Res Ctr, Hsinchu 300, Taiwan

[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[3] Woodland Consulting, Morristown, NJ 07960 USA

来源：

SURFACE SCIENCE | 2001年 / 478卷 / 1-2期

关键词：

oxidation; silicon oxides; growth; photoelectron spectroscopy;

D O I：

10.1016/S0039-6028(01)00968-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The high temperature oxidation of Si(001) produces a 13 Angstrom thick oxide consisting of four or five layers with uniformly graded composition, ranging from monovalent at the Si interface to quadrivalent at the surface. Once nucleated, the oxide layer rapidly reaches full thickness and then grows laterally, A few atomic layers of the underlying elemental Si are measurably perturbed by the sub-oxide overlayer. (C) 2001 Published by Elsevier Science B.V.

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收藏

页码：L333 / L338

页数：6

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