The effects of radiation damage and impurities on void dynamics in silicon

被引：23

作者：

Donnelly, SE ^{[1
]}

Vishnyakov, VM

Birtcher, RC

Carter, G

机构：

[1] Univ Salford, Joule Phys Lab, Salford M5 4WT, Lancs, England

[2] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2001年 / 175卷

关键词：

voids; bubbles; helium; silicon; gettering;

D O I：

10.1016/S0168-583X(00)00612-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Transmission electron microscopy (TEM) has been used to study the effects of implanted oxygen or carbon on the dynamics of cavity growth in silicon. The cavities are produced by implantation with helium ions followed by annealing to convert small He-filled bubbles into large empty voids. We have also investigated the effects of self-ion damage on cavity growth. Both impurities and self-ion damage can significantly inhibit void growth. In addition. hot stage TEM has been used to elucidate the processes responsible for cavity growth in an attempt to understand the way in which both impurities and radiation damage are able to modify these processes. Cavity growth is seen to be due to Ostwald ripening and coalescence in the early stages with some sporadic, rapid motion of large bubbles leading to coalescence at higher temperatures. Our research indicates that void dynamics in silicon are quite different from those in metallic systems. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：132 / 139

页数：8

共 29 条

[11] HELIUM DESORPTION PERMEATION FROM BUBBLES IN SILICON - A NOVEL METHOD OF VOID PRODUCTION [J].

GRIFFIOEN, CC ;

EVANS, JH ;

DEJONG, PC ;

VANVEEN, A .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 27 (03) :417-420

[12] Thermal relaxation of silicon islands and craters on silicon surfaces [J].

Ichimiya, A ;

Tanaka, Y ;

Hayashi, K .

SURFACE SCIENCE, 1997, 386 (1-3) :182-194

[13] REAL-TIME OBSERVATIONS OF VACANCY DIFFUSION ON SI(001)-(2X1) BY SCANNING-TUNNELING-MICROSCOPY [J].

KITAMURA, N ;

LAGALLY, MG ;

WEBB, MB .

PHYSICAL REVIEW LETTERS, 1993, 71 (13) :2082-2085

[14]

McCaffrey JP, 1997, MICROSC RES TECHNIQ, V36, P372, DOI 10.1002/(SICI)1097-0029(19970301)36:5<372::AID-JEMT5>3.0.CO

[15]

2-N

[16]

MYERS SM, 1993, MAT RES S C, V283, P549

[17] PROXIMITY GETTERING OF TRANSITION-METALS IN SILICON BY ION-IMPLANTATION [J].

OVERWIJK, MHF ;

POLITIEK, J ;

DEKRUIF, RCM ;

ZALM, PC .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 96 (1-2) :257-260

[18] Gettering of transition metals by cavities in silicon formed by helium ion implantation [J].

Petersen, GA ;

Myers, SM ;

Follstaedt, DM .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 127 :301-306

[19] GETTERING OF METALS BY HE INDUCED VOIDS IN SILICON [J].

RAINERI, V ;

BATTAGLIA, A ;

RIMINI, E .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 96 (1-2) :249-252

[20] Gettering by voids in silicon: A comparison with other techniques [J].

Raineri, V .

SOLID STATE PHENOMENA, 1997, 57-8 :43-51

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