Sealing method of dry-etched AlAs/GaAs top mirrors in vertical cavity surface emitting lasers

被引：6

作者：

Creusen, M

de Bruyn, F

Karouta, F

van der Vleuten, WC

van de Roer, TG

Smalbrugge, E

van Roy, BH

机构：

[1] Eindhoven Univ Technol, Dept Elect Engn, COBRA Interuniv Res Inst Commun Technol, Grp Elect Devices, NL-5600 MB Eindhoven, Netherlands

[2] Eindhoven Univ Technol, Dept Appl Phys, COBRA Interuniv Res Inst Commun Technol, Grp Elect Devices, NL-5600 MB Eindhoven, Netherlands

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 1999年 / 2卷 / 02期

关键词：

D O I：

10.1149/1.1390742

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A versatile sealing process for AlAs layers is presented. This sealing prevents the AlAs layers of AlAs/GaAs top distributed Bragg reflectors from further undesired oxidation during the wet oxidation of the AlAs current constriction layers in vertical cavity surface emitting lasers. This method has been successfully applied to protect the etched pillars in top mirrors although those pillars were plasma dry etched. (C) 1999 The Electrochemical Society. S1099- 0062( 98) 07- 019- 9. All rights reserved.

引用

页码：83 / 85

页数：3

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