Self-assembled flower-like nanostructures of InN and GaN grown by plasma-assisted molecular beam epitaxy

被引：20

作者：

Kumar, Mahesh ^{[1
,2
]}

Bhat, T. N. ^{[1
]}

Rajpalke, M. K. ^{[1
]}

Roul, B. ^{[1
,2
]}

Misra, P. ^{[3
]}

Kukreja, L. M. ^{[3
]}

Sinha, Neeraj ^{[4
]}

Kalghatgi, A. T. ^{[2
]}

Krupanidhi, S. B. ^{[1
]}

机构：

[1] Indian Inst Sci, Mat Res Ctr, Bangalore 560012, Karnataka, India

[2] Bharat Elect, Cent Res Lab, Bangalore 560013, Karnataka, India

[3] Raja Ramanna Ctr Adv Technol, Laser Mat Proc Div, Indore 452013, India

[4] Govt India, Off Principal Sci Advisor, New Delhi 110011, India

来源：

BULLETIN OF MATERIALS SCIENCE | 2010年 / 33卷 / 03期

关键词：

Nitrides; nano-flowers; photoluminescence; RF-MBE; OPTICAL-PROPERTIES; QUANTUM DOTS; LAYER; BLUE;

D O I：

10.1007/s12034-010-0034-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nanosized hexagonal InN flower-like structures were fabricated by droplet epitaxy on GaN/Si(111) and GaN flower-like nanostructure fabricated directly on Si(111) substrate using radio frequency plasma-assisted molecular beam epitaxy. Powder X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to study the crystallinity and morphology of the nanostructures. Moreover, X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) were used to investigate the chemical compositions and optical properties of nano-flowers, respectively. Activation energy of free exciton transitions in GaN nano-flowers was derived to be similar to 28.5 meV from the temperature dependent PL studies. The formation process of nano-flowers is investigated and a qualitative mechanism is proposed.

引用

页码：221 / 226

页数：6

共 21 条

[1] GaN islanding by spontaneous rearrangement of a strained two-dimensional layer on (0001) AlN [J].