Size and density control of In droplets at near room temperatures

被引:24
作者
Lee, J. H. [1 ]
Wang, Zh M. [2 ]
Kim, N. Y. [1 ]
Salamo, G. J. [2 ]
机构
[1] Kwangwoon Univ, Dept Elect Engn, Seoul 139701, South Korea
[2] Univ Arkansas, Inst Nanoscale Sci & Engn, Fayetteville, AR 72701 USA
关键词
QUANTUM DOTS; SELF-ORGANIZATION; SINGLE; PARTICLE; GROWTH;
D O I
10.1088/0957-4484/20/28/285602
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We report on the ability to control the size and density of In droplets on GaAs(100) substrates at near room temperatures using solid source molecular beam epitaxy. We specifically demonstrate the height, diameter and density control of In droplets as functions of substrate temperature (T-sub) and monolayer (ML) coverage. For a range of density (similar to 10(9)-10(10) cm(-2)), the growth window is revealed to be between 20 and 70 degrees C. For a fixed ML coverage, the size and density of droplets can be controlled by controlling the T-sub. For a fixed T-sub, by controlling the ML coverage, droplet size and density can be controlled. Even at near room temperatures (20-70 degrees C), In atoms are extremely sensitive to surface diffusion and this enables the control of the size and density of droplets. This study provides an aid to understanding the formation of In droplets at near room temperatures and can find applications in the formation of quantum structures and/or nanostructures based on droplet epitaxy.
引用
收藏
页数:6
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共 41 条
[1]   Optical behavior of GaAs/AlGaAs ringlike nanostructures [J].
AbuWaar, Ziad Y. ;
Mazur, Yuriy I. ;
Lee, Jihoon H. ;
Wang, Zhiming M. ;
Salamo, Gregory J. .
JOURNAL OF APPLIED PHYSICS, 2007, 101 (02)
[2]   Double quantum dot as a quantum bit [J].
DiVincenzo, DP .
SCIENCE, 2005, 309 (5744) :2173-2174
[3]   Formation of GaAs/AlGaAs and InGaAs/GaAs nanorings by droplet molecular-beam epitaxy [J].
Gong, Z ;
Niu, ZC ;
Huang, SS ;
Fang, ZD ;
Sun, BQ ;
Xia, JB .
APPLIED PHYSICS LETTERS, 2005, 87 (09)
[4]   INAS/GAAS PYRAMIDAL QUANTUM DOTS - STRAIN DISTRIBUTION, OPTICAL PHONONS, AND ELECTRONIC-STRUCTURE [J].
GRUNDMANN, M ;
STIER, O ;
BIMBERG, D .
PHYSICAL REVIEW B, 1995, 52 (16) :11969-11981
[5]   Metamorphosis of a quantum wire into quantum dots [J].
Hasen, J ;
Pfeiffer, LN ;
Pinczuk, A ;
He, S ;
West, KW ;
Dennis, BS .
NATURE, 1997, 390 (6655) :54-57
[6]   Colour-tunable light-emitting diodes based on InP/GaP nanostructures [J].
Hatami, Fariba ;
Masselink, W. Ted ;
Harris, James S. .
NANOTECHNOLOGY, 2006, 17 (15) :3703-3706
[7]   Effect of InAs dots on noise of quantum dot resonant tunneling single-photon detectors [J].
Hees, S. S. ;
Kardynal, B. E. ;
See, P. ;
Shields, A. J. ;
Farrer, I. ;
Ritchie, D. A. .
APPLIED PHYSICS LETTERS, 2006, 89 (15)
[8]   WSXM:: A software for scanning probe microscopy and a tool for nanotechnology [J].
Horcas, I. ;
Fernandez, R. ;
Gomez-Rodriguez, J. M. ;
Colchero, J. ;
Gomez-Herrero, J. ;
Baro, A. M. .
REVIEW OF SCIENTIFIC INSTRUMENTS, 2007, 78 (01)
[9]   Near room temperature droplet epitaxy for fabrication of InAs quantum dots [J].
Kim, JS ;
Koguchi, N .
APPLIED PHYSICS LETTERS, 2004, 85 (24) :5893-5895
[10]   Multi-scale ordering of self-assembled InAs/GaAs(001) quantum dots [J].
Kiravittaya, S. ;
Songmuang, R. ;
Rastelli, A. ;
Heidemeyer, H. ;
Schmidt, O. G. .
NANOSCALE RESEARCH LETTERS, 2006, 1 (01) :1-10