Interface of atomic layer deposited HfO2 films on GaAs (100) surfaces

被引：44

作者：

Hackley, Justin C. ^{[1
]}

Demaree, J. Derek ^{[2
]}

Gougousi, Theodosia ^{[1
]}

机构：

[1] Univ Maryland Baltimore Cty, Dept Phys, Baltimore, MD 21250 USA

[2] USA, Res Lab, Weapons & Mat Res Directorate, Aberdeen Proving Ground, MD 21005 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 16期

关键词：

D O I：

10.1063/1.2908223

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

HfO2 films have been deposited by using a tetrakis(dimethylamino)hafnium/H2O atomic layer deposition (ALD) process on GaAs. X-ray photoelectron spectroscopy measurements show that the HF and NH4OH predeposition surface treatment results in efficient removal of the Ga and As native oxides. No interface oxidation is detected after 15 cycles of HfO2 ALD implying effective passivation of the GaAs surface. Spectroscopic ellipsometry confirms linear growth at 1.0 A/cycle on both starting surfaces, while Rutherford backscattering spectrometry indicates steady-state coverage after about 10 ALD cycles. For films grown on native oxide GaAs, complete removal of the As oxide is observed after 20 ALD cycles. (c) 2008 American Institute of Physics.

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页数：3

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