An X-ray photoelectron spectroscopy study of the oxides of GaAs

被引：184

作者：

Surdu-Bob, CC ^{[1
]}

Saied, SO ^{[1
]}

Sullivan, JL ^{[1
]}

机构：

[1] Aston Univ, EEAP, Surface Sci Res Grp, Sch Engn & Appl Sci, Birmingham B4 7ET, W Midlands, England

来源：

APPLIED SURFACE SCIENCE | 2001年 / 183卷 / 1-2期

关键词：

GaAs oxides; XPS;

D O I：

10.1016/S0169-4332(01)00583-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this paper, by the use of X-ray photoelectron spectroscopy, we unequivocally identify the oxides present on GaAs surfaces and accurately measure the binding energies associated with the 2p(3/2), 3d, and Auger lines in the X-ray photoemission spectra. These measurements intended to provide reliable reference data for further work. We conducted an extensive analysis of the oxidation states of Ga metal and oxide powder reference samples. air exposed GaAs wafers, and wafers subjected to various surface treatments (argon plasma treatments and boiling). Based on this experimental evidence, an assignment of the photoelectron peaks to various chemical states is proposed. (C) 2001 Published by Elsevier Science B.V.

引用

页码：126 / 136

页数：11

共 39 条

[1] ELECTRONIC-STRUCTURE OF BINARY AND TERNARY GA OR AS OXIDES [J].