THE LOCAL ATOMIC-STRUCTURE OF THE OXIDE COATING ON POLISHED GAAS(100)

被引：18

作者：

BARRETT, NT

GREAVES, GN

PIZZINI, S

ROBERTS, KJ

机构：

[1] UNIV STRATHCLYDE,DEPT PURE & APPL CHEM,GLASGOW G1 1XL,SCOTLAND

[2] SERC,DARESBURY LAB,WARRINGTON WA4 4AD,CHESHIRE,ENGLAND

来源：

SURFACE SCIENCE | 1990年 / 227卷 / 03期

关键词：

D O I：

10.1016/S0039-6028(05)80022-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The local atomic structure of the surface oxide on a polished GaAs(100) wafer is investigated using glancing-angle X-ray absorption spectroscopy. Measurements show Ga to be coordinated to oxygen both tetrahedrally and octahedrally while As appears to occupy only tetrahedral sites. Close structural correlation is seen between the second nearest neighbours around Ga and As atoms, indicative of a single phase non-stoichiometric oxide. Depth sensitive measurements reveal the oxide to be about 7 Å in thickness with a concentration gradient of As into the surface. © 1990 Elsevier Science Publishers B.V. (North-Holland).

引用

页码：337 / 346

页数：10

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