Metal-sulfur-based air-stable passivation of GaAs with very low surface-state densities

被引:9
作者
Ashby, CIH [1 ]
Zavadil, KR [1 ]
Baca, AG [1 ]
Chang, PC [1 ]
Hammons, BE [1 ]
Hafich, MJ [1 ]
机构
[1] Sandia Natl Labs, Albuquerque, NM 87185 USA
关键词
D O I
10.1063/1.125734
中图分类号
O59 [应用物理学];
学科分类号
摘要
An air-stable electronic surface passivation for GaAs and other III-V compound semiconductors that employs sulfur and a suitable metal ion, e.g., Zn, and that is robust towards plasma dielectric deposition has been developed. Initial improvements in photoluminescence are twice that of S-only treatments and have been preserved for > 11 months with SiOxNy dielectric encapsulation. Photoluminescence and x-ray photoelectron spectroscopies indicate that the passivation consists of two major components with one being stable for > 2 years in air. This process improves heterojunction bipolar transistor current gain for both large and small area devices. (C) 2000 American Institute of Physics. [S0003-6951(00)00803-2].
引用
收藏
页码:327 / 329
页数:3
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