ULTRAVIOLET PHOTOSULFIDATION OF III-V COMPOUND SEMICONDUCTORS - A NEW APPROACH TO SURFACE PASSIVATION

被引：14

作者：

ASHBY, CIH

ZAVADIL, KR

HOWARD, AJ

HAMMONS, BE

机构：

[1] Sandia National Laboratories, Albuquerque

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 18期

关键词：

D O I：

10.1063/1.111623

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new passivation technique for III-V compound semiconductors based on ultraviolet photolysis of elemental sulfur vapor has been developed. Photosulfidation produces a greater increase in the photoluminescence intensity from GaAs samples than that produced by conventional (NH4)2S dip treatments and is more photostable than the conventional wet process. X-ray photoelectron spectroscopy of the photosulfided GaAs surfaces indicate formation of a surface sulfide rather than the disulfide characteristic of the (NH4)2S process.

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页码：2388 / 2390

页数：3

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