Passivation of GaAs/AlGaAs heterojunction bipolar transistors by S2Cl2 solution

被引：15

作者：

Cao, XA

Hou, XY

Chen, XY

Li, ZS

Su, RZ

Ding, XM

Wang, X

机构：

[1] Surface Physics Laboratory, Fudan University

[2] Physics Department, Northeast Forestry University

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 06期

关键词：

D O I：

10.1063/1.118268

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The diluted S2Cl2 solution has been employed to treat the GaAs/AlGaAs heterojunction bipolar transistors. It is shown that the de characteristics of the transistor could be improved significantly and the passivation effect is not subject to degradation by heating to 150 degrees C in atmospheric air and immersing in water. A real-time monitoring technique is proposed which provides good control of the passivation stopping point. (C) 1997 American Institute of Physics.

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收藏

页码：747 / 749

页数：3

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