Barrierless hole injection through sub-bandgap occupied states in organic light emitting diodes using substoichiometric MoOx anode interfacial layer

被引:56
作者
Vasilopoulou, Maria [1 ]
Palilis, Leonidas C. [1 ,2 ]
Georgiadou, Dimitra G. [1 ]
Kennou, Stella [3 ]
Kostis, Ioannis [1 ]
Davazoglou, Dimitris [1 ]
Argitis, Panagiotis [1 ]
机构
[1] NCSR Demokritos, Inst Microelect, Aghia Paraskevi 15310, Greece
[2] Univ Patras, Dept Phys, Patras 26500, Greece
[3] Univ Patras, Dept Chem Engn, Patras 26500, Greece
关键词
TRANSITION-METAL OXIDES; EFFICIENT; CELLS;
D O I
10.1063/1.3673283
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this letter, highly efficient hole injection was demonstrated in hole only devices based on organic semiconductors with different highest occupied molecular orbital level and transport properties. The barrierless hole injection was achieved by using a substoichiometric MoOx thin film (consisting of 65% Mo+6 and 35% Mo+5) as a higly effective anode interfacial layer. The current in these devices was found to be space charge limited, achieved due to the formation of highly efficient anode ohmic contact via the excellent band alignment through occupied gap states at the ITO/MoOx and MoOx/organic semiconductor modified interface. Quite remarkably, the efficiency of hole injection was found to be almost independent of the MoOx thickness, which is indicative of perfect band alignment at the anode interface. (C) 2012 American Institute of Physics. [doi:10.1063/1.3673283]
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页数:4
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