Effect of contamination on the electronic structure and hole-injection properties of MoO3/organic semiconductor interfaces

被引：163

作者：

Meyer, J. ^{[1
]}

Shu, A. ^{[1
]}

Kroeger, M. ^{[2
]}

Kahn, A. ^{[1
]}

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

[2] InnovationLab GmbH, D-69115 Heidelberg, Germany

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 13期

基金：

美国国家科学基金会;

关键词：

band structure; charge injection; electron affinity; ionisation; molybdenum compounds; organic semiconductors; organic-inorganic hybrid materials; ultraviolet photoelectron spectra; work function; LIGHT-EMITTING-DIODES; METAL-OXIDES; FILMS; LAYER;

D O I：

10.1063/1.3374333

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electronic structure and hole-injection properties of ambient contaminated molybdenum trioxide (MoO3) surfaces are studied by ultraviolet and inverse photoemission spectroscopy, and current-voltage measurements. Contamination reduces the work function (WF), electron affinity (EA) and ionization energy by about 1 eV with respect to the freshly evaporated film, to values of 5.7 eV, 5.5 eV, and 8.6 eV, respectively. However, the WF and EA remain sufficiently large that the hole-injection properties of MoO3 are not affected by contamination. The results are of particular importance in view of potential applications of transition metal oxides for low-cost manufacturing of devices in low-vacuum or nonvacuum environment.

引用

页数：3

共 21 条

[1] Role of air exposure in the improvement of injection efficiency of transition metal oxide/organic contact [J].

Cheung, C. H. ;

Song, W. J. ;

So, S. K. .

ORGANIC ELECTRONICS, 2010, 11 (01) :89-94

[2] High-performance organic thin-film transistors with metal oxide/metal bilayer electrode [J].

Chu, CW ;

Li, SH ;

Chen, CW ;

Shrotriya, V ;

Yang, Y .

APPLIED PHYSICS LETTERS, 2005, 87 (19) :1-3

[3] Hole Injection in a Model Fluorene-Triarylamine Copolymer [J].

Fong, Hon Hang ;

Papadimitratos, Alexis ;

Hwang, Joehyung ;

Kahn, Antoine ;

Malliaras, George G. .

ADVANCED FUNCTIONAL MATERIALS, 2009, 19 (02) :304-310

[4] Transition metal oxides as charge injecting layer for admittance spectroscopy [J].

Hoping, M. ;

Schildknecht, C. ;

Gargouri, H. ;

Riedl, T. ;

Tilgner, M. ;

Johannes, H. -H. ;

Kowalsky, W. .

APPLIED PHYSICS LETTERS, 2008, 92 (21)

[5] Energetics of metal-organic interfaces: New experiments and assessment of the field [J].

Hwang, Jaehyung ;

Wan, Alan ;

Kahn, Antoine .

MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2009, 64 (1-2) :1-31

[6] Electronic structure and electrical properties of interfaces between metals and π-conjugated molecular films [J].

Kahn, A ;

Koch, N ;

Gao, WY .

JOURNAL OF POLYMER SCIENCE PART B-POLYMER PHYSICS, 2003, 41 (21) :2529-2548

[7] Electronic structure of anode interface with molybdenum oxide buffer layer [J].

Kanai, Kaname ;

Koizumi, Kenji ;

Ouchi, Satoru ;

Tsukamoto, Yoshiaki ;

Sakanoue, Kei ;

Ouchi, Yukio ;

Seki, Kazuhiko .

ORGANIC ELECTRONICS, 2010, 11 (02) :188-194

[8] The effect of molybdenum oxide interlayer on organic photovoltaic cells [J].

Kim, Do Young ;

Subbiah, Jegadesan ;

Sarasqueta, Galileo ;

So, Franky ;

Ding, Huanjun ;

Irfan ;

Gao, Yongli .

APPLIED PHYSICS LETTERS, 2009, 95 (09)

[9] P-type doping of organic wide band gap materials by transition metal oxides: A case-study on Molybdenum trioxide [J].

Kroger, Michael ;

Hamwi, Sami ;

Meyer, Jens ;

Riedl, Thomas ;

Kowalsky, Wolfgang ;

Kahn, Antoine .

ORGANIC ELECTRONICS, 2009, 10 (05) :932-938

[10]

Kroger S. H. M., 2009, APPL PHYS LETT, V95

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