Electrical characteristics of MILC poly-Si TFTs with long Ni-offset structure

被引：22

作者：

Kim, GB ^{[1
]}

Yoon, YG ^{[1
]}

Kim, MS ^{[1
]}

Jung, H ^{[1
]}

Lee, SW ^{[1
]}

Joo, SK ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2003年 / 50卷 / 12期

关键词：

dopant effect; low temperature; metal-induced lateral crystallization (MILC); poly-Si thin-film transistors (TFTs); INDUCED LATERAL CRYSTALLIZATION; THIN-FILM TRANSISTORS; SOLID-PHASE EPITAXY; AMORPHOUS SI; DOPANT; KINETICS; LAYERS;

D O I：

10.1109/TED.2003.818154

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have observed that B-2 H-6-doped amorphous silicon (a-Si) showed a faster growth rate of metal-induced lateral crystallization (MILC) than that of undoped a-Si. From the analysis of the microstructure, it was thought that boron atoms could help modify the growth behavior from that of a branched crystal network to unidirectional crystal growth with few branches and that growth rate could to be enhanced. By using this good crystalline structure at the boundary region between the source/drain and channel, we have successfully fabricated p-type poly-Si thin-film transistors with good electrical properties with a MILC process.

引用

页码：2344 / 2347

页数：4

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