Model for dopant-induced enhancement in solid-phase epitaxial recrystallization of amorphous Si

被引：3

作者：

Park, B

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1996年 / 35卷 / 12A期

关键词：

solid-phase epitaxy; a-Si; dopant; dangling bond; recrystallization;

D O I：

10.1143/JJAP.35.L1611

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A model is proposed for the effect of solute atoms on the solid-phase epitaxial regrowth kinetics in amorphous Si. The enhanced growth rate with p-type or n-type solutes is explained in terms of reduction of the bond strength, caused by excess holes or electrons residing at the crystal-amorphous interface supplied from the crystalline side due to the Fermi-level shift. This makes the bond-breaking (formation) process easier at ledges along the interface during recrystallization, creating more thermally generated dangling bonds compared to the intrinsic case.

引用

收藏

页码：L1611 / L1613

页数：3

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