ELECTRONIC EFFECT ON CRYSTALLIZATION GROWTH VELOCITIES PRODUCED BY CHARGED DANGLING BONDS IN A-SI

被引：18

作者：

MOSLEY, LE

PAESLER, MA

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 01期

关键词：

D O I：

10.1063/1.94979

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：86 / 88

页数：3

共 17 条

[1] ELECTRON SPIN RESONANCE IN AMORPHOUS SILICON, GERMANIUM, AND SILICON CARBIDE [J].

BRODSKY, MH ;

TITLE, RS .

PHYSICAL REVIEW LETTERS, 1969, 23 (11) :581-&

[2]

COMPAAN A, 1983, MAT RES SOC S P, V13, P23

[3] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J].

CSEPREGI, L ;

KENNEDY, EF ;

GALLAGHER, TJ ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4234-4240

[4]

GERMAIN PJ, 1983, MATER RES SOC S P, V13, P135

[5]

JELLISON GE, 1983, MAT RES SOC S P, V13, P35

[6] EPITAXIAL REGROWTH OF INTRINSIC, P-31-DOPED AND COMPENSATED (P-31+B-11 DOPED) AMORPHOUS SI [J].

LIETOILA, A ;

WAKITA, A ;

SIGMON, TW ;

GIBBONS, JF .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) :4399-4405

[7]

Mott N. F., 1979, ELECT PROCESSES NONC

[8] INFLUENCE OF SPIN-DENSITY IN IMPLANTED SI LAYERS ON PULSED-LASER ANNEALING [J].

MURAKAMI, K ;

IKAWA, E ;

GAMO, K ;

NAMBA, S ;

AKASAKA, Y ;

MASUDA, Y .

APPLIED PHYSICS LETTERS, 1979, 35 (05) :413-415

[9] INTERFACE STRUCTURES DURING SOLID-PHASE-EPITAXIAL GROWTH IN ION-IMPLANTED SEMICONDUCTORS AND A CRYSTALLIZATION MODEL [J].

NARAYAN, J .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (12) :8607-8614

[10]

OLSON GL, 1983, MATER RES SOC S P, V13, P141

← 1 2 →