Less than 0.1 μm linewidth fabrication by visible light using super-resolution near-field structure

被引：14

作者：

Kuwahara, M ^{[1
]}

Nakano, T ^{[1
]}

Mihalcea, C ^{[1
]}

Shima, T ^{[1
]}

Kim, JH ^{[1
]}

Tominaga, J ^{[1
]}

Atoda, N ^{[1
]}

机构：

[1] NAIR, Adv Opt Memory Grp, Tsukuba, Ibaraki 3058562, Japan

来源：

MICROELECTRONIC ENGINEERING | 2001年 / 57-8卷

关键词：

Super-RENS; antimony thin film; optical near-field lithography; spectroscopic ellipsometry; damaged photoresist;

D O I：

10.1016/S0167-9317(01)00450-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have achieved less than 0.1 mum linewidth fabrication in a photoresist film by using visible light together with a super-resolution near-field structure (Super-RENS). This technique enables to produce an optical aperture with subwavelength dimensions at a fixed distance to the photoresist film. Illumination of this aperture leads to a strong laterally confined optical near-field which exposes the photoresist. For this achievement, we have used polished SiO2 disk substrates, which have an atomically flat surface, in order to reduce edge roughness and also to improve our process. Additionally, optical properties of antimony films as one key material of super-RENS have been estimated and laser heat effects influencing the formation mechanism of the grooves in the photoresist film will be discussed in this paper. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：883 / 890

页数：8

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