A new lithography technique using super-resolution near-field structure

被引：10

作者：

Kuwahara, M ^{[1
]}

Nakano, T ^{[1
]}

Tominaga, J ^{[1
]}

Lee, MB ^{[1
]}

Atoda, N ^{[1
]}

机构：

[1] Natl Inst Adv Interdisciplinary Res, Adv Opt Memory Grp, Tsukuba, Ibaraki 3058562, Japan

来源：

MICROELECTRONIC ENGINEERING | 2000年 / 53卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(00)00372-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have succeeded in fabricating narrow grooves in a photoresist film by a new lithography technique using an optical near-field with 365nm and 440nm light sources. This technique makes use of super-resolution near field structure (Super-RENS) which is composed of multilayres to convert a focused laser beam to optical near-field. By this technique, grooves with linewidth of 100-nm-order could be produced beyond diffraction limit at high speed.

引用

页码：535 / 538

页数：4

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