Improved photoluminescence of 1.26 μm InGaAs/GaAs quantum wells assisted by Sb surfactant and indium-graded intermediate layers -: art. no. 061908

被引：4

作者：

Chang, YA ^{[1
]}

Kuo, HC ^{[1
]}

Chang, YH ^{[1
]}

Wang, SC ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 06期

关键词：

D O I：

10.1063/1.2009048

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have grown high-quality InGaAs/GaAs quantum wells (QWs) with emission wavelength range of 1.2-1.26 mu m by metalorganic chemical vapor depositions. By incorporating Sb surfactant and the indium-graded intermediate layers into InGaAs/GaAs QWs, the photoluminescence (PL) intensity of the 1.26-mu m In0.45Ga0.55As/GaAs QW is enhanced by a factor of 20 and the full width at half maximum value is reduced from 60.4 meV to 35.9 meV. The good crystalline quality is proved by temperature-dependent PL, which shows that the activation energies of In0.45Ga0.55As and Sb-assisted indium-graded In0.45Ga0.55As QWs are 20.87 meV and 27.09 meV. (c) 2005 American Institute of Physics.

引用

页数：3

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