Quantum confined Stark effect in GaInNAs/GaAs multiple quantum wells

被引：7

作者：

Héroux, JB ^{[1
]}

Yang, X ^{[1
]}

Wang, WI ^{[1
]}

机构：

[1] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA

来源：

IEE PROCEEDINGS-OPTOELECTRONICS | 2003年 / 150卷 / 01期

关键词：

D O I：

10.1049/ip-opt:20030042

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The potential of the GaInNAs/GaAs material system for the fabrication Of tunable devices based on the quantum confined Stark effect is investigated. Transfer matrix calculations are presented to show that the band alignment is ideal for such applications since the large conduction band offset and heavier electron effective mass limit electron tunnelling and exciton quenching in the presence of an electric field. Optical transitions LIP to the third confined energy levels (3e-3h) were observed by electroreflectance spectroscopy in a Ga0.84In0.16N0.02As0.98:Sb/GaAs p-i-n multi-quantum well structure. A 12 meV Stark shift of the fundamental transition is found experimentally with an estimated applied electric field of 60kV/cm, in good agreement with an effective well width calculation.

引用

页码：92 / 95

页数：4

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