Formation of hydrogen molecules in crystalline silicon

被引：32

作者：

Leitch, AWR

Weber, J

Alex, V

机构：

[1] Univ Port Elizabeth, Dept Phys, ZA-6000 Port Elizabeth, South Africa

[2] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1999年 / 58卷 / 1-2期

关键词：

Raman scattering; silicon; hydrogen;

D O I：

10.1016/S0921-5107(98)00265-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Molecular hydrogen was directly observed by Raman spectroscopy in silicon samples subjected to a hydrogen plasma. At lower hydrogen plasma temperatures (similar to 150 degrees C) the hydrogen molecules form at tetrahedral interstitial sites within the Si lattice. For higher temperatures (> 150 degrees C) the plasma treatment results in hydrogen related platelets which act as sinks to which the molecules diffuse. Once trapped within the extended voids created by the platelets, the H-2 molecules exhibit a vibrational frequency that is practically the same as the well-known value for gaseous H-2. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：6 / 12

页数：7

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