Layer-by-layer removal of GaAs(110) by bromine

被引：6

作者：

Cha, CY

Weaver, JH

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 06期

关键词：

D O I：

10.1116/1.588797

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Scanning tunneling microscopy results show that heating a nearly saturated Br-GaAs(110) 2 x 1/c(2 x 2) surface to 600 K leads to a random distribution of single-layer deep vacancy islands. These islands expand via continued etching upon heating to 700 K. Subsequent exposure to Br-2 at 625 K results in complete removal of the first layer via step retreat. Accordingly, monolayer etching can be achieved. The different etching pathways of the exposure-annealing treatment and that of continuous etching are discussed. (C) 1996 American Vacuum Society.

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页码：3559 / 3562

页数：4

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