BR-2 ADSORPTION ON GAAS(110) AND SURFACE ETCHING AT LOW-TEMPERATURE

被引：16

作者：

GU, C

CHEN, Y

OHNO, TR

WEAVER, JH

机构：

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.46.10197

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The adsorption and reactivity of Br2 on GaAs (110) was studied in the temperature range of 25 less-than-or-equal-to T less-than-or-equal-to 300 K with photoemission spectroscopy. Initial Br2 adsorption was dissociative at all temperatures with Br bonding to both As and Ga. Thermally activated etching was observed after warming up a surface with condensed Br2 multilayers. AsBr3 formation was evident at 50-100 K but this species desorbed for T greater-than-or-equal-to 150 K. GaBr3 formation also occurred and this species remained on the surface until approximately 250 K. Br-Ga and Br-As surface species were evident for all temperatures. The erosion of the (110) surface was nearly stoichiometric.

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页码：10197 / 10200

页数：4

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