High-efficiency monolithic three-terminal GaAs/Si tandem solar cells fabricated by metalorganic chemical vapor deposition

被引：26

作者：

Soga, T

Yang, M

Jimbo, T

Umeno, M

机构：

[1] NAGOYA INST TECHNOL,DEPT ELECT & COMP ENGN,SHOWA KU,NAGOYA,AICHI 466,JAPAN

[2] NAGOYA INST TECHNOL,RES CTR MICRO STRUCT DEVICES,SHOWA KU,NAGOYA,AICHI 466,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 2B期

关键词：

GaAs/Si tandem solar cell; MOCVD; TEM; dislocation; thermal cycle annealing;

D O I：

10.1143/JJAP.35.1401

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A monolithic GaAs/Si tandem solar cell which consists of a p(+)-n GaAs top cell and an n(+)-p-p(+) Si bottom cell is fabricated by metalorganic chemical vapor deposition. The conversion efficiency of the top cell is increased by improvement of the solar cell structure (adoption of a graded band emitter layer) and optimization of the growth conditions (increase of the thermal annealing temperature and the growth temperature). By combining the conversion efficiencies of the GaAs top cell (16.0%) and Si bottom cell (3.9%), the active-area conversion efficiency of 19.9% (AM0, 1 sun) has been obtained in the three-terminal configuration.

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收藏

页码：1401 / 1404

页数：4

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