DEFECT CHARACTERIZATION OF GAAS ON SI GROWN BY MOCVD

被引：18

作者：

SOGA, T ^{[1
]}

NOZAKI, S ^{[1
]}

NOTO, N ^{[1
]}

NISHIKAWA, H ^{[1
]}

JIMBO, T ^{[1
]}

UMENO, M ^{[1
]}

机构：

[1] NAGOYA INST TECHNOL,DEPT PHYS,NAGOYA,AICHI 466,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1989年 / 28卷 / 12期

关键词：

D O I：

10.1143/JJAP.28.2441

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2441 / 2445

页数：5

共 13 条

[1]

ERNST F, 1988, J APPL PHYS, V64, P452

[2] 14.5-PERCENT CONVERSION EFFICIENCY GAAS SOLAR-CELL FABRICATED ON SI SUBSTRATES [J].

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[3] DEFECT REDUCTION BY THERMAL ANNEALING OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES [J].

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MATYI, RJ .

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[4] METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FABRICATED IN GAAS-LAYERS GROWN DIRECTLY ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

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CHOI, HK ;

TSAUR, BY .

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[5]

NOTO N, 1989, 1989 P MRS SPRING M

[6]

NOZAKI S, 1989, 1989 P MRS SPRING M

[7] INITIAL-STAGE OF MOCVD GROWTH OF GAAS ON SI [J].

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UEDA, T ;

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JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :443-448

[8] ROOM-TEMPERATURE LASER OPERATION OF AIGAAS GAAS DOUBLE HETEROSTRUCTURES FABRICATED ON SI SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

SAKAI, S ;

SOGA, T ;

TAKEYASU, M ;

UMENO, M .

APPLIED PHYSICS LETTERS, 1986, 48 (06) :413-414

[9] MOCVD GROWTH OF GAAS ON SI SUBSTRATES WITH ALGAP AND STRAINED SUPERLATTICE LAYERS [J].

SOGA, T ;

HATTORI, S ;

SAKAI, S ;

TAKEYASU, M ;

UMENO, M .

ELECTRONICS LETTERS, 1984, 20 (22) :916-918

[10] MOCVD GROWTH AND CHARACTERIZATION OF GAAS AND GAP GROWN ON SI SUBSTRATES [J].

SOGA, T ;

KOHAMA, Y ;

UCHIDA, K ;

TAJIMA, M ;

JIMBO, T ;

UMENO, M .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :499-503

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