Nitride deep-ultraviolet light-emitting diodes with microlens array

被引：146

作者：

Khizar, M ^{[1
]}

Fan, ZY ^{[1
]}

Kim, KH ^{[1
]}

Lin, JY ^{[1
]}

Jiang, HX ^{[1
]}

机构：

[1] Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 17期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1914960

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the fabrication of 280-nm AlGaN-based deep-ultraviolet light-emitting diodes (UV LEDs) on sapphire substrates with an integrated microlens array. Microlenses with a diameter of 12 gm were fabricated on the sapphire substrate by resist thermal reflow and plasma dry etching. LED devices were flip-chip bonded on high thermal conductive AIN ceramic submounts to improve the thermal dissipation, and the emitted UV light was extracted through the sapphire substrates. With the integrated microlens array, a 55% enhancement in the output power at 20-mA dc driving was achieved compared with the same LED without microlens. The light extraction enhancement is the result of the reduced internal reflections of the light caused by the microlens surface profile. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

共 17 条

[1] High-efficiency 269 nm emission deep ultraviolet light-emitting diodes [J].