Advanced Multilayer Amorphous Silicon Thin-Film Transistor Structure: Film Thickness Effect on Its Electrical Performance and Contact Resistance

被引：9

作者：

Kuo, Alex ^{[1
]}

Won, Tae Kyung ^{[2
]}

Kanicki, Jerzy ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Organ & Mol Elect Lab, Ann Arbor, MI 48109 USA

[2] Appl Komatsu Technol Amer Inc, Santa Clara, CA 95054 USA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 05期

关键词：

amorphous silicon thin-film transistor; dual layer; thickness effect; contact resistance;

D O I：

10.1143/JJAP.47.3362

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the intrinsic and extrinsic electrical characteristics of advanced multilayer amorphous silicon (a-Si:H) thin-film transistor (TFT) with dual amorphous silicon nitride (a-SiN(X):H) and a-Si:H layers. The thickness effect of the high electronic quality a-Si:H film on the transistor's electrical property was investigated; with increasing film thickness, both field-effect mobility and subthreshold swing show improvement and the threshold voltage remain unchanged. However, the contact resistance increases with the a-Si:H film thickness. Using the two-step plasma enhanced chemical vapor deposition process, we fabricated TFT's with acceptable field-effect mobility (similar to 1 cm(2) V(-1) s(-1)) and threshold voltage (<1.5 V) with enhanced throughput. [DOI: 10.1143/JJAP.47.3362]

引用

页码：3362 / 3367

页数：6

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