High-quality B-doped homoepitaxial diamond films using trimethylboron

被引：108

作者：

Yamanaka, S ^{[1
]}

Watanabe, H ^{[1
]}

Masai, S ^{[1
]}

Takeuchi, D ^{[1
]}

Okushi, H ^{[1
]}

Kajimura, K ^{[1
]}

机构：

[1] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 10A期

关键词：

B-doped homoepitaxial diamond films; microwave plasma CVD; trimethylboron; clean CVD system; Hall mobility; high quality;

D O I：

10.1143/JJAP.37.L1129

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-quality B-doped homoepitaxial diamond films have been synthesized by microwave plasma chemical-vapor-deposition (CVD) using a mixture consisting of CH4, H-2, and trimethylboron B(CH3)(3) diluted by H-2 gas. These films have been obtained on the basis of the approach that high-quality diamond films should be grown in a clean CVD system. Hall-effect measurements of the film show that the Hall mobility exceeds about 1800 cm(2)/V . s when the hole concentration is 2.3 x 10(14) cm(-3) at room temperature (290 K) and about 3300 cm(2)/V . s at 170 K. These results indicate that the quality of the present B-doped CVD films is comparable with or better than that of high-quality natural diamonds.

引用

页码：L1129 / L1131

页数：3

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