Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor

被引：150

作者：

Fujiwara, Akira ^{[1
]}

Nishiguchi, Katsuhiko ^{[1
]}

Ono, Yukinori ^{[1
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Kanagawa 2430198, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 04期

基金：

日本学术振兴会;

关键词：

D O I：

10.1063/1.2837544

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nanoampere single-electron pumping is presented at 20 K using a single-electron ratchet comprising silicon nanowire metal-oxide-semiconductor field-effect transistors. The ratchet features an asymmetric potential with a pocket that captures single electrons from the source and ejects them to the drain. Directional single-electron transfer is achieved by applying one ac signal with the frequency up to 2.3 GHz. We find anomalous shapes of current steps which can be ascribed to nonadiabatic electron capture. (c) 2008 American Institute of Physics.

引用

页数：3

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