Third-generation plasma immersion ion implanter for biomedical materials and research

被引:99
作者
Chu, PK [1 ]
Tang, BY
Wang, LP
Wang, XF
Wang, SY
Huang, N
机构
[1] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
[2] Harbin Inst Technol, Natl Key Lab, Harbin 150001, Peoples R China
关键词
D O I
10.1063/1.1340029
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A third generation plasma immersion ion implanter dedicated to biomedical materials and research has been designed and constructed. The distinct improvement over first and second generation multipurpose plasma immersion ion implantation equipment is that hybrid and combination techniques utilizing metal and gas plasmas, sputter deposition, and ion beam enhanced deposition can be effectively conducted in the same machine. The machine consists of four sets of high-efficiency metal arc plasma sources with magnetic filters, a custom designed high voltage modulator for operation up to 60 kV, a separate high-frequency, low-voltage power supply for hybrid treatment processes, special rotating sample stage for samples with an irregular shape, and other advanced features. The machine has been installed at Southwest Jiaotong University and operated reliably for 6 months. This article describes the design principles and performances of the machine as well as pertinent biomedical applications. (C) 2001 American Institute of Physics.
引用
收藏
页码:1660 / 1665
页数:6
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